Mitsubishi Electric’s New 6.5 kV Full-SiC Power Semiconductor Module Achieves World’s Highest Power Density

TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO:6503) announced today that it has developed a 6.5 kV full silicon carbide (SiC) power semiconductor module that is believed to offer the world’s highest power density (calculated from rated voltage and current) among power semiconductor modules rated from 1.7 kV to 6.5 kV. The unprecedented power density is made possible by the model’s original structure with integrated metal-oxide-semiconductor field-effect transistor (MOSFET) and

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